Name: FDC6318P
Brand: ON Semiconductor
SKU: FDC6318P
Price: 0.92000 USD
Availability: InStock

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FDC6318P

Manufacturer part number:FDC6318P

Manufacturer:ON Semiconductor

Description:FDC6318P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDC6318P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	90MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-12V
Max Power Dissipation	960mW
Terminal Form	GULL WING
Current Rating	-2.5A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
Turn On Delay Time	9 ns
Power - Max	700mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 6V
Current - Continuous Drain (Id) @ 25°C	2.5A
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Rise Time	14ns
Fall Time (Typ)	14 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	-2.5A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Nominal Vgs	700 mV
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDC6318P Product Details

FDC6318P Description

These P-channel 1.8V MOSFET are manufactured using Fairchild Semiconductor's advanced PowerTrack process, which is tailor-made to minimize on-resistance and maintain low gate charge to achieve excellent switching performance.