NTJD1155LT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NTJD1155LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
130mOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
400mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
630mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
NTJD1155
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
400mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
175m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Drain to Source Voltage (Vdss)
8V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)
1.3A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
1V
Drain to Source Breakdown Voltage
-8V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:13996 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTJD1155LT1G Product Details
NTJD1155LT1G Description
The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment's where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF. NTJD1155LT1G Features
1.5 to 8V ON/OFF range Low profile, small footprint package -55 to 150°C Operating junction temperature range Extremely low RDS (ON) P-channel load switch MOSFET Level shift MOSFET is ESD protected
NTJD1155LT1G Applications
Portable Devices, Industrial Cell Phones Digital Cameras PDAs Media Players Power Management,
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