FDC6310P Description
These P-channel 2.5V MOSFET are manufactured using Fairchild Semiconductor's advanced PowerTrress process, which is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance.These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications with larger and more expensive SO-8 and TSSOP-8 packages.
FDC6310P Applications
Load switch
Battery protection Power management
FDC6310P Features
[email protected]=4.5V
Roson=190m|[email protected]=-2.5V
Low gate charge
?¤Fast switching speed
.High performance trench technology for extremely low ROsiON
.SuperSOTTM-6packagesmall footprint72%
smaller than standard SO-8); low profile(1mm thick)
