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SIR770DP-T1-GE3

SIR770DP-T1-GE3

SIR770DP-T1-GE3

Vishay Siliconix

MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky

SOT-23

SIR770DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2018
Series TrenchFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Max Power Dissipation17.8W
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-PDSO-C6
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation3.6W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.8 V
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5766 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.323661$0.323661
10$0.305340$3.0534
100$0.288057$28.8057
500$0.271752$135.876
1000$0.256370$256.37

About SIR770DP-T1-GE3

The SIR770DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIR770DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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