BUZ32 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BUZ32 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Series
SIPMOS®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
9.5A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
75W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
75W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
530pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.5A Tc
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
9.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.4Ohm
Drain to Source Breakdown Voltage
200V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:12425 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.56000
$0.56
500
$0.5544
$277.2
1000
$0.5488
$548.8
1500
$0.5432
$814.8
2000
$0.5376
$1075.2
2500
$0.532
$1330
BUZ32 Product Details
BUZ32 Description
BUZ32 is a 200v N-channel SIPMOS? Power Transistor. A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BUZ32 is in the TO-220-3 package with 75W power dissipation.
BUZ32 Features
N-channel
Enhancement mode
Avalanche-rated
Drain- source breakdown voltage: 200V
Package: TO-220-3
BUZ32 Applications
Consumer electronics
Radio-frequency (RF) applications
Transportation technology
Automotive industry
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