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FDAF59N30

FDAF59N30

FDAF59N30

ON Semiconductor

MOSFET N-CH 300V 34A TO-3PF

SOT-23

FDAF59N30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series UniFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 161W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 56mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:2627 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.762177$4.762177
10$4.492619$44.92619
100$4.238321$423.8321
500$3.998416$1999.208
1000$3.772090$3772.09

About FDAF59N30

The FDAF59N30 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 300V 34A TO-3PF.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDAF59N30, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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