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SPA20N60C3XKSA1

SPA20N60C3XKSA1

SPA20N60C3XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 13.1A, 10V ±20V 2400pF @ 25V 114nC @ 10V TO-220-3 Full Pack

SOT-23

SPA20N60C3XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating20.7A
Pin Count3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34.5W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation34.5W
Case Connection ISOLATED
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 20.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage600V
Avalanche Energy Rating (Eas) 690 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1220 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.82000$5.82
10$5.22800$52.28
100$4.34720$434.72
500$3.58444$1792.22

SPA20N60C3XKSA1 Product Details

SPA20N60C3XKSA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 690 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20.7A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 67 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.

SPA20N60C3XKSA1 Features


the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 20.7A
the turn-off delay time is 67 ns


SPA20N60C3XKSA1 Applications


There are a lot of Infineon Technologies
SPA20N60C3XKSA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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