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IRF530PBF

IRF530PBF

IRF530PBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 160mOhm @ 8.4A, 10V ±20V 670pF @ 25V 26nC @ 10V 100V TO-220-3

SOT-23

IRF530PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 160mOhm
Max Operating Temperature175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating14A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 88W Tc
Element ConfigurationSingle
Power Dissipation88W
Turn On Delay Time10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance670pF
Recovery Time 280 ns
Drain to Source Resistance 270mOhm
Rds On Max 160 mΩ
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4522 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.26000$1.26
50$1.01400$50.7
100$0.89130$89.13
500$0.69840$349.2

IRF530PBF Product Details

IRF530PBF Overview


A device's maximal input capacitance is 670pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF530PBF Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRF530PBF Applications


There are a lot of Vishay Siliconix
IRF530PBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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