Name: FCPF600N60Z
Brand: ON Semiconductor
SKU: FCPF600N60Z
Price: 0.74000 USD
Availability: InStock

new-10%

FCPF600N60Z

Manufacturer part number:FCPF600N60Z

Manufacturer:ON Semiconductor

Description:FCPF600N60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCPF600N60Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	SuperFET® II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	89W Tc
Element Configuration	Single
Power Dissipation	28W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.4A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	7.4A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	650V
Height	16.07mm
Length	10.36mm
Width	4.9mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FCPF600N60Z Product Details

FCPF600N60Z Description

FCPF600N60Z is a 600v N-Channel SUPERFET? II FAST Power MOSFET. SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, the SuperFET II MOSFET FCPF600N60Z is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.