IRFS350A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRFS350A Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Supplier Device Package
TO-3PF
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
92W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
300mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11.5A Tc
Gate Charge (Qg) (Max) @ Vgs
131nC @ 10V
Drain to Source Voltage (Vdss)
400V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
In-Stock:3878 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.28000
$2.28
500
$2.2572
$1128.6
1000
$2.2344
$2234.4
1500
$2.2116
$3317.4
2000
$2.1888
$4377.6
2500
$2.166
$5415
IRFS350A Product Details
IRFS350A Description
IRFS350A is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 400V. The operating temperature of the IRFS350A is -55??C~150??C TJ and its maximum power dissipation is 92W Tc. IRFS350A has 3 pins and it is available in Tube packaging way.
IRFS350A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10|ìA (Max.) @ VDS = 400V
Low RDS(ON): 0.254? (Typ.)
IRFS350A Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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