FCMT099N65S3 Description
The FCMT099N65S3 is a MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m. In order to achieve exceptional low on-resistance and reduced gate charge performance, the SUPERFET III MOSFET series of high voltage super-junction (SJ) MOSFETs from ON Semiconductor uses charge balance technology. This cutting-edge technology is designed to reduce conduction loss, deliver outstanding switching performance, and resist extremely high dv/dt rates. In light of this, SUPERFET III MOSFET is ideal for switching power applications including server/telecom power, adapter, and solar inverter applications.
The Power88 package is a very thin surface-mount package that has a tiny footprint (1 mm high) (8x8 mm2).
Due to decreased parasitic source inductance and separate power and drive sources, SUPERFET III MOSFET in a Power88 package offers exceptional switching performance. Moisture Sensitivity Level 1 is provided by Power88 (MSL 1).
FCMT099N65S3 Features
Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF)
100% Avalanche Tested
These Devices are Pb?Free and are RoHS Compliant
700 V @ TJ = 150°C
Typ. RDS(on) = 87 m
Ultra Low Gate Charge (Typ. Qg = 56 nC)
FCMT099N65S3 Applications
