IRL640A Description
These N-Channel enhancement mode power field effect transistors are created using the exclusive, planar DMOS technology of ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for switch mode power supplies, DC-AC converters for continuous power supply, high efficiency switching DC/DC converters, motor control, and switch mode power supplies.
IRL640A Features
18 A, 200 V
rDS(ON) = 180 m|? @ VGS = 5 V
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 95 pF)
Fast Switching Speed
100% Avalanche Tested
Improved dv/dt Capability
Logic-Level Gate Drive
IRL640A Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
