FDD8453LZ

Name: FDD8453LZ
Brand: ON Semiconductor
SKU: FDD8453LZ
Price: 1.78000 USD
Availability: InStock

new-10%

Manufacturer part number:FDD8453LZ

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.7m Ω @ 15A, 10V ±20V 3515pF @ 20V 64nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:FDD8453LZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Factory Lead Time	8 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	6.7MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	FDD8453
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.1W Ta 65W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.7m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3515pF @ 20V
Current - Continuous Drain (Id) @ 25°C	16.4A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	16.4A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain to Source Breakdown Voltage	40V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free