2SD1628F-TD-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.During maximum operation, collector current can be as low as 5A volts.
2SD1628F-TD-H Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
2SD1628F-TD-H Applications
There are a lot of ON Semiconductor 2SD1628F-TD-H applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
