Name: BVSS123LT1G
Brand: ON Semiconductor
SKU: BVSS123LT1G
Price: 0.41000 USD
Availability: InStock

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BVSS123LT1G

Manufacturer part number:BVSS123LT1G

Manufacturer:ON Semiconductor

Description:BVSS123LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BVSS123LT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 11 hours ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Pin Count	3
Number of Elements	1
Power Dissipation-Max	225mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225mW
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 25V
Current - Continuous Drain (Id) @ 25°C	170mA Ta
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	170mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	6Ohm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

BVSS123LT1G Product Details

BVSS123LT1G Description

This P-Channel MOSFET has been adjusted for rDS(0N), switching performance, and resilience using Fairchild Semiconductor's revolutionary PowerTrench? technology. These devices are designed to provide a high level of dv/dt capabilities as well as a significant reduction in on-resistance for the most demanding applications.