CSD17381F4T Description
The design and optimization of this 90 m, 30 V N-Channel FemtoFETTM MOSFET technology minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.
CSD17381F4T Feature
Ultra-low on-resistance
Ultra-low Qg and Qgd
Low threshold voltage
Ultra-small footprint (0402 case size): – 1.0 mm × 0.6 mm
Ultra-low profile: – 0.36 mm height
Integrated ESD protection diode
Lead and halogen free
RoHS compliant
CSD17381F4T Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
