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BUT12ATU

BUT12ATU

BUT12ATU

ON Semiconductor

BUT12ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUT12ATU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BUT12A
Power - Max 100W
Transistor Type NPN
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.2A, 6A
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 8A
In-Stock:2760 items

BUT12ATU Product Details

BUT12ATU Overview


Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1.2A, 6A.There is no device package available from the supplier for this product.Collector Emitter Breakdown occurs at 450VV - Maximum voltage.

BUT12ATU Features


the vce saturation(Max) is 1.5V @ 1.2A, 6A
the supplier device package of TO-220-3

BUT12ATU Applications


There are a lot of ON Semiconductor BUT12ATU applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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