BSS84LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
BSS84LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
10Ohm
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-130mA
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
Number of Elements
1
Power Dissipation-Max
225mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225mW
Turn On Delay Time
3.6 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
30pF @ 5V
Current - Continuous Drain (Id) @ 25°C
130mA Ta
Rise Time
1ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Fall Time (Typ)
1 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
130mA
Threshold Voltage
-2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
Nominal Vgs
2 V
Height
1.016mm
Length
3.0226mm
Width
1.397mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:16956 items
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BSS84LT1G Product Details
BSS84LT1G Description
The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications. The ON Semiconductor MOSFET is a P channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.? BSS84LT1G Features
? SOT?23 Surface Mount Package Saves Board Space ? BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant BSS84LT1G Applications
Load Switching Inverters Rectifiers Motor drives DC choppers
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