BSC026N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSC026N08NS5ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 156W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
156W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 115μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 40V
Current - Continuous Drain (Id) @ 25°C
23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.0026Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
400A
Avalanche Energy Rating (Eas)
370 mJ
Max Junction Temperature (Tj)
150°C
Height
1.1mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:2158 items
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BSC026N08NS5ATMA1 Product Details
BSC026N08NS5ATMA1 Description
BSC026N08NS5ATMA1 is a Power-Transistor MOSFET which optimized for Synchronous Rectification in server and desktop.It has Pb-free lead plating and compliant RoHS.
BSC026N08NS5ATMA1 Features
·Optimized for Synchronous Rectification in server and desktop ·100% avalanche tested ·Superior thermal resistance ·N-channe ·Qualified according to JEDECfor target applications ·Pb-free lead plating; RoHS compliant ·Halogen-free according to lEC61249-2-21
BSC026N08NS5ATMA1 Application It is qualified according to JEDECfor target applications.
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