BSP52 Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 800mA volts can be achieved.
BSP52 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BSP52 Applications
There are a lot of ON Semiconductor BSP52 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
