MPSA64G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.As a result, the part has a transition frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.
MPSA64G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64G Applications
There are a lot of ON Semiconductor MPSA64G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
