BSP19AT1G Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 70MHz.Input voltage breakdown is available at 350V volts.The maximum collector current is 100mA volts.
BSP19AT1G Features
the DC current gain for this device is 40 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 70MHz
BSP19AT1G Applications
There are a lot of ON Semiconductor BSP19AT1G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
