2SC4617EBTLS Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.As a result, it can handle voltages as low as 50V volts.A maximum collector current of 150mA volts is possible.
2SC4617EBTLS Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLS Applications
There are a lot of ROHM Semiconductor 2SC4617EBTLS applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
