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SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

Vishay Siliconix

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

SOT-23

SI7703EDN-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code S-XDSO-C6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation1.3W
Case Connection DRAIN
Turn On Delay Time4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 6.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 800μA
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time6ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) -6.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 20A
FET Feature Schottky Diode (Isolated)
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:3841 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.849949$0.849949
10$0.801838$8.01838
100$0.756451$75.6451
500$0.713633$356.8165
1000$0.673239$673.239

About SI7703EDN-T1-GE3

The SI7703EDN-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7703EDN-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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