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BD538J

BD538J

BD538J

ON Semiconductor

BD538J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD538J Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 50W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
In-Stock:2866 items

BD538J Product Details

BD538J Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 600mA, 6A.The product comes in the supplier device package of TO-220-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BD538J Features


the DC current gain for this device is 30 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the supplier device package of TO-220-3

BD538J Applications


There are a lot of ON Semiconductor BD538J applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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