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BD242A-S

BD242A-S

BD242A-S

Bourns Inc.

BD242A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD242A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation40W
Base Part Number BD242
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4335 items

BD242A-S Product Details

BD242A-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.During maximum operation, collector current can be as low as 3A volts.

BD242A-S Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V

BD242A-S Applications


There are a lot of Bourns Inc. BD242A-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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