BD242C Overview
In this device, the DC current gain is 25 @ 1A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 600mA, 3A.Emitter base voltages of -5V can achieve high levels of efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The breakdown input voltage is 100V volts.Supplier device package TO-220AB comes with the product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD242C Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
the supplier device package of TO-220AB
BD242C Applications
There are a lot of ON Semiconductor BD242C applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
