BD241C Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The breakdown input voltage is 100V volts.TO-220AB is the supplier device package for this product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.When collector current reaches its maximum, it can reach 3A volts.
BD241C Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
the supplier device package of TO-220AB
BD241C Applications
There are a lot of ON Semiconductor BD241C applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
