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BCX17LT1G

BCX17LT1G

BCX17LT1G

ON Semiconductor

BCX17LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCX17LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCX17
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Collector Emitter Saturation Voltage620mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 940μm
Length 2.9mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:28978 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.069480$0.06948
500$0.051088$25.544
1000$0.042574$42.574
2000$0.039058$78.116
5000$0.036503$182.515
10000$0.033956$339.56
15000$0.032840$492.6
50000$0.032291$1614.55

BCX17LT1G Product Details

BCX17LT1G Overview


This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 620mV ensures maximum design flexibility.A VCE saturation (Max) of 620mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Single BJT transistor can be broken down at a voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BCX17LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA

BCX17LT1G Applications


There are a lot of ON Semiconductor BCX17LT1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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