BD17510STU Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.A maximum collector current of 3A volts can be achieved.
BD17510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17510STU Applications
There are a lot of ON Semiconductor BD17510STU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
