BC857BTT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Maximum collector currents can be below 100mA volts.
BC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1G Applications
There are a lot of ON Semiconductor BC857BTT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
