2N4401TAR Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.As a result, the part has a transition frequency of 250MHz.An input voltage of 40V volts is the breakdown voltage.Collector current can be as low as 600mA volts at its maximum.
2N4401TAR Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401TAR Applications
There are a lot of ON Semiconductor 2N4401TAR applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
