BC856BM3T5G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.The part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC856BM3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BM3T5G Applications
There are a lot of ON Semiconductor BC856BM3T5G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
