2SAR502EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.When VCE saturation is 400mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Breakdown input voltage is 30V volts.The maximum collector current is 500mA volts.
2SAR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502EBTL Applications
There are a lot of ROHM Semiconductor 2SAR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
