BC848BLT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.The part has a transition frequency of 100MHz.Input voltage breakdown is available at 30V volts.The maximum collector current is 100mA volts.
BC848BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BLT1G Applications
There are a lot of ON Semiconductor BC848BLT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter