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2N6109

2N6109

2N6109

ON Semiconductor

2N6109 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6109 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2003
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Voltage - Rated DC -50V
Max Power Dissipation40W
Current Rating7A
Base Part Number 2N6109
Polarity PNP
Element ConfigurationSingle
Power - Max 40W
Gain Bandwidth Product10MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2.5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A
Collector Emitter Breakdown Voltage50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 7A
Collector Emitter Saturation Voltage3.5V
Frequency - Transition 10MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
REACH SVHC No SVHC
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:6503 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.81000$1.81
10$1.65000$16.5
25$1.47960$36.99
100$1.33810$133.81
250$1.19660$299.15
500$1.05510$527.55

2N6109 Product Details

2N6109 Overview


This device has a DC current gain of 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3.5V.When VCE saturation is 3.5V @ 3A, 7A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.Single BJT transistor comes in a supplier device package of TO-220AB.This device displays a 50V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 7A volts is possible.

2N6109 Features


the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
the supplier device package of TO-220AB

2N6109 Applications


There are a lot of ON Semiconductor 2N6109 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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