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BC639-16ZL1

BC639-16ZL1

BC639-16ZL1

ON Semiconductor

BC639-16ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC639-16ZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2004
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating1A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC639
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Continuous Collector Current 1A
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2214 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.482597$0.482597
10$0.455280$4.5528
100$0.429509$42.9509
500$0.405198$202.599
1000$0.382262$382.262

BC639-16ZL1 Product Details

BC639-16ZL1 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A constant collector voltage of 1A is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.As a result, the part has a transition frequency of 200MHz.Collector current can be as low as 1A volts at its maximum.

BC639-16ZL1 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz

BC639-16ZL1 Applications


There are a lot of ON Semiconductor BC639-16ZL1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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