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2SA1020-Y,T6F(J

2SA1020-Y,T6F(J

2SA1020-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

SOT-23

2SA1020-Y,T6F(J Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Operating Temperature150°C TJ
PackagingBulk
Published 2010
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 100MHz
In-Stock:2325 items

About 2SA1020-Y,T6F(J

The 2SA1020-Y,T6F(J from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PNP 2A 50V TO226-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SA1020-Y,T6F(J, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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