Description
The AFGB30T65SQDN is a 650 V, 30 A, D2PAK IGBT for Automotive Applications. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide-semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).
Features
? TJ = 175°C Maximum Junction Temperature
? Series of High-Speed Switching
? VCE(sat) = 1.6 V (typ.) @ IC = 30 A
? Soft Recovery Co-packaged Diode with Low VF
? Qualified by AEC-Q101
? Each and every part is dynamically tested
Applications
? Automotive DC/DC Converter for HEV
? Automotive On-Board Charger
? For Automotive
? Low conduction loss
? Low noise and conduction loss
