IKA10N65ET6XKSA2 Description
The IKA10N65ET6XKSA2 is an IGBT in trench and field-stop technology with a soft, fast recovery anti-parallel Rapid diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal rather than drawing any input current. When a BJT's output portion is described as "bipolar," both charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKA10N65ET6XKSA2 Features
Low gate charge QG
Pb-free lead plating; RoHS compliant
Very soft, fast recovery anti-parallel Rapid diode
Very low VCE(sat) 1.5V (typ.)
Maximum junction temperature 175°C
Short circuit withstand time 3μs
Trench and field-stop technology for 650V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat and positive temperature coefficient
IKA10N65ET6XKSA2 Applications
- GPD (general purpose drives)
- Air conditioning
- Other small home appliances
