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2SK3666-4-TB-E

2SK3666-4-TB-E

2SK3666-4-TB-E

ON Semiconductor

2SK3666-4-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2SK3666-4-TB-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e6
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation200mW
Base Part Number 2SK3666
Element ConfigurationSingle
Power Dissipation200mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Continuous Drain Current (ID) 10mA
Gate to Source Voltage (Vgs) -30V
Drain to Source Breakdown Voltage 30V
Current - Drain (Idss) @ Vds (Vgs=0) 2.5mA @ 10V
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 200Ohm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4482 items

2SK3666-4-TB-E Product Details

2SK3666-4-TB-E Description


2SK3666-4-TB-E, manufactured by On Semiconductor and distributed by Utmel Electronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Hybrid, electric & powertrain systems Communications equipment Wired networking Enterprise systems Enterprise projectors. And the main parameters of this part is Junction FET 30V 10mA IDSS 0.6 to 10 mA N-Channel Single CP. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



2SK3666-4-TB-E Features


  • Small Ciss

  • Small IGSS



2SK3666-4-TB-E Applications


  • Impedance conversion

  • Infrared sensor applications

  • Low-frequency general-purpose amplifier


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