2SD1816S-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.As a result, the part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
2SD1816S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-E Applications
There are a lot of ON Semiconductor 2SD1816S-E applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
