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MJW21196

MJW21196

MJW21196

ON Semiconductor

MJW21196 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW21196 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2010
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating16A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 3V @ 3.2A, 16A
Collector Emitter Breakdown Voltage250V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1136 items

MJW21196 Product Details

MJW21196 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 8A 5V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.A VCE saturation (Max) of 3V @ 3.2A, 16A means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 16A for this device.In this part, there is a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 16A volts.

MJW21196 Features


the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz

MJW21196 Applications


There are a lot of ON Semiconductor MJW21196 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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