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2SD1801T-E

2SD1801T-E

2SD1801T-E

ON Semiconductor

2SD1801T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1801T-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-252-3
Number of Pins 3
PackagingBag
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Max Power Dissipation800mW
Pin Count3
Polarity NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
Collector Emitter Breakdown Voltage50V
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:11474 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.602385$1.602385
10$1.511684$15.11684
100$1.426117$142.6117
500$1.345394$672.697
1000$1.269240$1269.24

2SD1801T-E Product Details

2SD1801T-E Overview


If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 2A volts.

2SD1801T-E Features


the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1801T-E Applications


There are a lot of ON Semiconductor 2SD1801T-E applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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