TIP111 Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a breakdown input voltage of 80V volts that it can take.TO-220AB is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 2A volts.
TIP111 Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
the supplier device package of TO-220AB
TIP111 Applications
There are a lot of ON Semiconductor TIP111 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
