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2SD1060S-1EX

2SD1060S-1EX

2SD1060S-1EX

ON Semiconductor

2SD1060S-1EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1060S-1EX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature150°C TJ
PackagingTube
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.75W
Power - Max 1.75W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 60V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:2881 items

2SD1060S-1EX Product Details

2SD1060S-1EX Overview


This device has a DC current gain of 140 @ 1A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SD1060S-1EX Features


the DC current gain for this device is 140 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A

2SD1060S-1EX Applications


There are a lot of ON Semiconductor 2SD1060S-1EX applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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