2SC6096-TD-E Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 150mV @ 100mA, 1A.Emitter base voltages of 6.5V can achieve high levels of efficiency.300MHz is present in the transition frequency.Input voltage breakdown is available at 100V volts.A maximum collector current of 2A volts can be achieved.
2SC6096-TD-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 150mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
a transition frequency of 300MHz
2SC6096-TD-E Applications
There are a lot of ON Semiconductor 2SC6096-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
