MJD6039T4G Overview
This device has a DC current gain of 500 @ 2A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 8mA, 2A.A constant collector voltage of 4A is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor can be broken down at a voltage of 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
MJD6039T4G Features
the DC current gain for this device is 500 @ 2A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
MJD6039T4G Applications
There are a lot of ON Semiconductor MJD6039T4G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
