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2SC3646S-P-TD-E

2SC3646S-P-TD-E

2SC3646S-P-TD-E

ON Semiconductor

2SC3646S-P-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC3646S-P-TD-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
PackagingTape & Reel (TR)
Published 2012
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage100V
Frequency - Transition 120MHz
RoHS StatusROHS3 Compliant
In-Stock:25663 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2SC3646S-P-TD-E Product Details

2SC3646S-P-TD-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 5V.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2SC3646S-P-TD-E Features


the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA

2SC3646S-P-TD-E Applications


There are a lot of ON Semiconductor 2SC3646S-P-TD-E applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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