2SB1302T-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation (Max) of 500mV @ 60mA, 3A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a transition frequency of 320MHz in the part.Maximum collector currents can be below 5A volts.
2SB1302T-TD-E Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 320MHz
2SB1302T-TD-E Applications
There are a lot of ON Semiconductor 2SB1302T-TD-E applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
